1999. 11. 16 1/3 semiconductor technical data KTB2510 epitaxial planar pnp transistor revision no : 1 high power amplifier darlington application. features complementary to ktd1510 recommended for 60w audio amplifier output stage. maximum rating (ta=25 1 ) 1. base 2. collector 3. emitter to-3p(n) c g l k h a d b e f i d p pt m j q 123 a 15.9 max millimeters dim b 4.8 max c 20.0 0.3 d 2.0 0.3 d 1.0+0.3/-0.25 e2.0 f1.0 g 3.3 max h9.0 i4.5 j 2.0 k 1.8 max l 20.5 0.5 p 5.45 0.2 q 3.2 0.2 t 0.6+0.3/-0.1 2.8 m + _ + _ + _ + _ + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo -160 v collector-emitter voltage v ceo -150 v emitter-base voltage v ebo -5 v collector current i c -10 a base current i b -1 a collector power dissipation (tc=25 1 ) p c 100 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-160v, i e =0 - - -100 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -100 a collector-emitter breakdown voltage v (br)ceo i c =-30ma, i b =0 -150 - - v dc current gain h fe v ce =-4v, i c =-7a 5000 - - collector-emitter saturation voltage v ce(sat) i c =-7a, i b =-7ma - - -2.5 v base-emitter saturation voltage v be(sat) i c =-7a, i b =-7ma - - -3.0 v transition frequency f t v ce =-12v, i c =-2a - 50 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 230 - pf collecto r base emitter 70 ? equivalent circuit
1999. 11. 16 2/3 KTB2510 revision no : 1 c collector current i (a) -6 -8 -4 -2 -1 collector-emitter saturation 0 ce(sat) -0.2 base current i (ma) b 0 base-emitter voltage v (v) be v - i i - v ce collector-emitter voltage v (v) 0-2 -10 c 0 collector current i (a) -6 -4 -6 -2 -4 -8 ce c i =-0.4ma b -0.6ma -0.8ma -1.0ma -1.2ma -1.5ma -2.0 m a -10ma -2.5ma -0.5 -1 -5 -10 -50 -100 -200 -2 -3 voltage v (v) i =-5a c -1 -2 -2.5 -10 125 c (c ase t e mp) 25 c (case t e mp) -30 c ( case t e mp) ce(sat) b i - v be c r - t time t (s) 10 3 th(t) transient thermal resistance 0.1 th(t) 0.5 1 1000 500 -10 -0.5 -0.2 collector current i (a) c h - i fe c fe dc current gain h -1 -5 5000 10000 50000 125 c 25 c -30 c r ( c/w) -3 10 -2 -1 10 1 2 t transition frequency f (mhz) collector current i (a) 0.02 0 20 60 c 100 f - i tc 0.05 0.1 0.5 1 5 10 40 80 typ. v =-12v ce v =-4v ce ce v =-4v i =-7a c i =-10a c
1999. 11. 16 3/3 KTB2510 revision no : 1 safe operating area ce collector-emitter voltage v (v) -3 -5 -10 -50 c collector current i (a) -100 300 -0.05 -0.1 -0.5 -1 -5 -10 -30 100ms * 10ms * i max.(pulsed) * c dc operation ta=25 c 50 pc - ta ambient temperature ta ( c) c collector power dissipation p (w) 025 3.5 50 100 100 75 125 150 (2) (1) (1) tc=ta infinite heat sink (2) no heat sink in temperature linearly with increase curves must be derated pulse ta=25 c * single nonrepetitive
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